v2.1 = 22m = 17m www.belling.com.cn page1 b lm 2 004n e pb free product n-channel enhancement mode power mosfet description the BLM2004NE uses advanced trench technology to pro vide excellent r ds(on) , low gate charge and operation with gate voltages as low as 2.5v. this device is suitable for use as a load switch or in pwm applications .it is esd protest ed. general features v ds = 20v,i d =6a esd rating: 2000v hbm high power and current handing capability lead free product is acquired surface mount package application pwm application load switch schematic diagram marking and pin assignment sot23-6l top view package marking and ordering information device marking device device package reel size tape width quantity 2004ne BLM2004NE sot23-6l ?330mm 12mm 3000 units absolute maximum ratings (ta=25 unless otherwise noted) parameter symbol limit unit drain-source voltage v ds 20 v gate-source voltage v gs 12 v drain current-continuous i d 6 a drain current-pulsed (note 1) i dm 30 a maximum power dissipation p d 1.25 w operating junction and storage temperature range t j ,t stg -55 to 150 thermal characteristic thermal resistance,junction-to-ambient (note 2) r ja 100 /w =2.5v =4.5v typ.r ds(on) ? @ v gs typ.r ds(on) ? @ v gs
www.belling.com.cn page2 b lm 2 004n e pb free product electrical characteristics (ta=25 unless otherwise noted) parameter symbol condition min typ max unit off characteristics drain-source breakdown voltage bv dss v gs =0v i d =250 a 20 - v zero gate voltage drain current i dss v ds =20v,v gs =0v - - 1 a gate-body leakage current i gss v gs =10v,v ds =0v - - 10 a on characteristics (note 3) gate threshold voltage v gs(th) v ds =v gs ,i d =250 a 0.45 0.7 1.0 v v gs =4.5v, i d =6a - 17 24 m drain-source on-state resistance r ds(on) v gs =2.5v, i d =5a - 22 30 m forward transconductance g fs v ds =5v,i d =6a - 20 - s dynamic characteristics (note4) input capacitance c lss - 650 - pf output capacitance c oss - 140 - pf reverse transfer capacitance c rss v ds =10v,v gs =0v, f=1.0mhz - 60 - pf switching characteristics (note 4) turn-on delay time t d(on) - 0.5 ns turn-on rise time t r - 1 ns turn-off delay time t d(off) - 12 ns turn-off fall time t f v dd =10v,r l =1. 5 v gs =5v,r gen =3 - 4 ns total gate charge q g - 8 nc gate-source charge q gs - 2.5 - nc gate-drain charge q gd v ds =10v,i d =6a, v gs =4.5v - 3 - nc drain-source diode characteristics diode forward voltage (note 3) v sd v gs =0v,i s =1a - - 1.2 v diode forward current (note 2) i s - - 6 a notes: 1. repetitive rating: pulse width limited by maximum j unction temperature. 2. surface mounted on fr4 board, t 10 sec. 3. pulse test: pulse width 300 s, duty cycle 2%. 4. guaranteed by design, not subject to production v2.1
www.belling.com.cn page3 b lm 2 004n e pb free product typical electrical and thermal characteristics vgs rgen vin g vdd rl vout s d figure 1:switching test circuit t j -junction temperature( ) figure 3 power dissipation vds drain-source voltage (v) figure 5 output characteristics v in v out 10% 10% 50% 50% pulse width inverted t d(on) 90% t r t on 90% 10% t off t d(off) t f 90% v in v out 10% 10% 50% 50% pulse width inverted t d(on) 90% 90% t r t on 90% 10% t off t d(off) t f 90% figure 2:switching waveforms vds drain-source voltage (v) figure 4 safe operation area i d - drain current (a) figure 6 drain-source on-resistance p d power(w) i d - drain current (a rdson on-resistance(m ) i d - drain current (a) v2.1
www.belling.com.cn page4 b lm 2 004n e pb free product vgs gate-source voltage (v) figure 7 transfer characteristics vgs gate-source voltage (v) figure 9 rdson vs vgs qg gate charge (nc) figure 11 gate charge t j -junction temperature( ) figure 8 drain-source on-resistance vds drain-source voltage (v) figure 10 capacitance vs vds vsd source-drain voltage (v) figure 12 source- drain diode forward i d - drain current (a) vgs gate-source voltage (v) normalized on-resistance c capacitance (pf) i s - reverse drain current (a) rdson (m ) v2.1
www.belling.com.cn page5 b lm 2 004n e pb free product square wave pluse duration(sec) figure 13 normalized maximum transient thermal impe dance r(t),normalized effective transient thermal impedance v2.1
www.belling.com.cn page6 b lm 2 004n e pb free product sot23-6l package information v2.1
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